Program at a glance
Hiroshi Amano (Nagoya Univ., Japan): How to increase investment in GaN?
Rong Zhang (Nanjing Univ., China): Nitride semiconductor quantum engineering and device applications
Hiroshi Fujioka (Univ. of Tokyo, Japan): Characteristics of nitride semiconductors prepared by pulsed sputtering and its device applications
Shuo-Hung Hsu (National Tsing Hua Univ., Taiwan): GaN HEMTs for high-frequency power applications
Yoshihiro Ishitani (Chiba Univ., Japan): Imaging of phonon transport in GaInN/GaN-heterointerfaces by Raman scattering measurements using a double-laser system
Motoaki Iwaya (Meijo Univ., Japan): AlGaN-based UV-B laser diode fabricated on sapphire substrate and its progress
Junichi Takino (Panasonic Corp., Japan): Ultra-low resistive GaN bulk growth by oxide vapor phase epitaxy
Makoto Kasu (Saga Univ., Japan): Recent progress of NO2 p-type doped diamond MOSFET and heteroepitaxial diamond wafer technologies
Masashi Kato (Nagoya Institute of Tech., Japan): Observation of carrier lifetimes inside of SiC epilayers and devices
Tsunenobu Kimoto (Kyoto Univ., Japan): Progress and future challenges in SiC MOSFETs
Katsumi Kishino (Sophia Univ., Japan): InGaN/GaN ordered nanocolumns for visible light emitting devices
Martin Kuball (Univ. of Bristol, the United Kingdom): GaN power devices – Do we understand how they work?
Ziyi Zhang (Nagoya Univ., Japan): Realization of continuous-wave lasing of AlGaN-based UVC laser diode
Dong-Seon Lee (GIST, Korea): Remote epitaxial growth of GaN thin film on graphene/AlN template and stability of graphene in MOCVD
Bin Liu (Nanjing Univ., China): Research progress of hybrid III-nitride/quantum dots Micro-LED devices for RGB/white emissions
Kazuhiro Ohkawa (KAUST, Saudi Arabia): InGaN-based red micro-LED arrays fabricated by hydrogen passivation
Shyh-Chiang Shen (Vanguard International Semiconductor Corp., Taiwan): 8-inch GaN HEMT: Progress and opportunities
Bing-Yue Tsui (National Yang Ming Chiao Tung Univ., Taiwan): Recent progress and issues in 4H-SiC CMOS process technology
Hitoshi Umezawa (AIST, Japan): Diamond semiconductor electronics for harsh environmental applications
Xuelin Yang (Peking Univ., China): Technology of growing thick GaN layers on Si substrates and the physics of carbon impurity in GaN
Hiroshi Yano (Univ. of Tsukuba, Japan): Characterization of SiC MOS structures using p-channel devices
Yoshiyuki Yonezawa (AIST, Japan): R&D status of next-generation high- to ultra-high-voltage SiC power device technologies.
Bao-Ping Zhang (Xiamen Univ., China): Fabrication of GaN-based microcavities and optoelectronic devices
Plenary talk: 50 minutes
Invited talk: 30 minutes (including 5-min. Q&A)
Contributed oral talk: 15 minutes (including 3-min. Q&A)
Guideline for plenary/invited/contributed oral presenters
A projection laser pointer and a laptop computer with MS PowerPoint 2016 and a latest version of Adobe Acrobat Reader will be available for oral presentations. We kindly ask the speakers to upload the presentation files to the computer during the break time before the session. It is recommended for oral presenters to make slides with the XGA standard (1024×768; 4:3 ratio). The speakers may use their own laptops, compatible with a VGA video or HDMI connector. In that case, we kindly ask to test the computers during the break time before the session.
Guideline for poster presenters
Boards and push pins will be provided for poster presenters. The boards will fit posters up to A0 format (W841 mm × H1189 mm). Please display the paper title, author names, and affiliations at the top of the posters. The presenters should stand in front of their own posters to discuss their results with attendees during the allotted session time. Posters may be set up from the noon of the day of the poster session and the setting must be completed before the allotted session time. They should be immediately taken down after the session ends. The posters that are left until the start of next session will be discarded by the secretarial staff